Electronic Structural Details of Donor-Vacancy Complexes in Si-Doped Ge and Ge-Doped Si

AuthID
 P-003-92P
6
Author(s)
Castro, F
·
Tipo de Documento
Article
Year published
2010
Publicado
in THIN SOLID FILMS, ISSN: 0040-6090
Volume: 518, Número: 9, Páginas: 2381-2385 (5)
Conference
Symposium on Silicon and Germanium Issues for Future Cmos Devices Held at the 2009 E-Mrs Spring Meeting, Date: JUN 08-12, 2009, Location: Strasbourg, FRANCE, Patrocinadores: European Mat Res Soc
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Publication Identifiers
SCOPUS: 2-s2.0-76049101338
Wos: WOS:000275615100021
Source Identifiers
ISSN: 0040-6090
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