Trivacancy in Silicon: A Combined Dlts and Ab-Initio Modeling Study

AuthID
 P-003-DMA
11
Author(s)
Markevich, VP
·
Peaker, AR
·
Lastovskii, SB
·
Murin, LI
·
Markevich, AV
·
Dobaczewski, L
·
Monakhov, EV
·
Svensson, BG
Tipo de Documento
Article
Year published
2009
Publicado
in PHYSICA B-CONDENSED MATTER, ISSN: 0921-4526
Volume: 404, Número: 23-24, Páginas: 4565-4567 (3)
Conference
25Th International Conference on Defects in Semiconductors, Date: JUL 20-24, 2009, Location: St Petersburg, RUSSIA, Patrocinadores: Russian Fdn Basic Res, Russian Acad Sci
Indexing
Wos®
Scopus®
Crossref®8
Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-74349085204
Wos: WOS:000276029300018
Source Identifiers
ISSN: 0921-4526
Export Publication Metadata
Lista Marked
 Adicionar à lista Marked
Info
At this moment we don't have any links to full text documens.

Um espaço para investigadores e suas Instituições

Links Úteis

Ajuda

© 2024 CRACS & Inesc TEC - All Rights Reserved Política de Privacidade | Terms of Service