Stable In-Defect Complexes in Gan and Aln

AuthID
 P-003-DMC
6
Author(s)
Schmitz, J
·
Niederhausen, J
·
Penner, J
·
Vianden, R
Tipo de Documento
Article
Year published
2009
Publicado
in PHYSICA B-CONDENSED MATTER, ISSN: 0921-4526
Volume: 404, Número: 23-24, Páginas: 4866-4869 (4)
Conference
25Th International Conference on Defects in Semiconductors, Date: JUL 20-24, 2009, Location: St Petersburg, RUSSIA, Patrocinadores: Russian Fdn Basic Res, Russian Acad Sci
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Publication Identifiers
SCOPUS: 2-s2.0-74349124873
Wos: WOS:000276029300100
Source Identifiers
ISSN: 0921-4526
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