Trivacancy and Trivacancy-Oxygen Complexes in Silicon: Experiments and Ab Initio Modeling

AuthID
 P-003-E5J
10
Author(s)
Markevich, VP
·
Peaker, AR
·
Lastovskii, SB
·
Murin, LI
·
Dobaczewski, L
·
Monakhov, EV
·
Svensson, BG
Tipo de Documento
Article
Year published
2009
Publicado
in PHYSICAL REVIEW B, ISSN: 1098-0121
Volume: 80, Número: 23
Indexing
Wos®
Scopus®
Crossref®42
Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-77954709543
Wos: WOS:000273228800060
Source Identifiers
ISSN: 1098-0121
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