Effects of Gd2O3 Gate Dielectric on Proton-Irradiated Algan/Gan Hemts

AuthID
 P-015-GXV
6
Author(s)
Gao, Z
·
Romero, MF
·
Pampillón, MA
·
Andrés, ES
·
Calle, F
Tipo de Documento
Article
Year published
2017
Publicado
in IEEE ELECTRON DEVICE LETTERS, ISSN: 0741-3106
Volume: 38, Número: 5, Páginas: 611-614 (4)
Indexing
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Scopus®
Crossref®16
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Publication Identifiers
SCOPUS: 2-s2.0-85019179305
Wos: WOS:000400413200020
Source Identifiers
ISSN: 0741-3106
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