Study of SinX:HY Passivant Layers for Algan/Gan High Electron Mobility Transistors

AuthID
P-015-GY4
7
Author(s)
Gago R.
·
Romero M.F.
·
Jiménez A.
·
González-Posada F.
·
Braña A.F.
·
Muñoz E.
Tipo de Documento
Proceedings Paper
Year published
2008
Publicado
in Physica Status Solidi (C) Current Topics in Solid State Physics, ISSN: 18626351
Volume: 5, Número: 2, Páginas: 518-521 (3)
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-77951132695
Source Identifiers
ISSN: 18626351
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