Effect of the Growth Temperature and the Aln Mole Fraction on in Incorporation and Properties of Quaternary Iii-Nitride Layers Grown by Molecular Beam Epitaxy

AuthID
 P-015-GY5
10
Author(s)
Fernández-Garrido S.
·
Gago R.
·
Bertram F.
·
Christen J.
·
Luna E.
·
Trampert A.
·
Pereiro J.
·
Muoz E.
·
Calleja E.
Tipo de Documento
Article
Year published
2008
Publicado
in Journal of Applied Physics, ISSN: 00218979
Volume: 104, Número: 8
Indexing
Scopus®
Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-55249115582
Source Identifiers
ISSN: 00218979
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