Comparison of Vacancy Creation by Nuclear and Electronic Processes in Silicon Irradiated with Swift Kr and Bi Ions

AuthID
P-000-DEB
9
Author(s)
Skuratov, VA
·
Sperr, P
·
Egger, W
·
Gill, CL
·
de Lima, AP
·
4
Editor(es)
Hyodo, T; Kobayashi, Y; Nagashima, Y; Saito, H
Tipo de Documento
Article
Year published
2004
Publicado
in POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS in Materials Science Forum, ISSN: 0255-5476
Volume: 445-6, Páginas: 93-95 (3)
Conference
13Th International Conference on Positron Annihilation (Icpa-13), Date: SEP 07-12, 2003, Location: Kyoto, JAPAN, Patrocinadores: Commemorat Assoc Japan World Exposit (1970), Res Fdn Mat Sci, Sci Council Japan, Phys Soc Japan, Japan Soc Appl Phys, Chem Soc Japan, Japanese Soc Radiat Chem, Japan Radioisotope Assoc
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-3142692852
Wos: WOS:000189406800025
Source Identifiers
ISSN: 0255-5476
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