Three-State Memory Combining Resistive and Magnetic Switching Using Tunnel Junctions

AuthID
 P-004-6TW
7
Author(s)
Zhang, Z
·
Liu, Y
·
Tipo de Documento
Article
Year published
2007
Publicado
in JOURNAL OF PHYSICS D-APPLIED PHYSICS, ISSN: 0022-3727
Volume: 40, Número: 19, Páginas: 5819-5823 (5)
Indexing
Wos®
Scopus®
Crossref®16
Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-34748868091
Wos: WOS:000250604000004
Source Identifiers
ISSN: 0022-3727
Export Publication Metadata
Lista Marked
 Adicionar à lista Marked
Info
At this moment we don't have any links to full text documens.

Um espaço para investigadores e suas Instituições

Links Úteis

Ajuda

© 2024 CRACS & Inesc TEC - All Rights Reserved Política de Privacidade | Terms of Service