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The Structure of Crystallographic Damage in Gan Formed During Rare Earth Ion Implantation with and Without an Ultrathin Aln Capping Layer

AuthID
P-004-H3G

Author(s)

Gloux, F

Tipo de Documento

Article

Year published

2006

Publicado

in SUPERLATTICES AND MICROSTRUCTURES, ISSN: 0749-6036

Volume: 40, Número: 4-6, Páginas: 300-305 (6)

Conference

Symposium on Material Science and Technology of Wide Bandgap Semiconductors Held at the 2006 Spring Meeting of the Emrs, Date: MAY 29-JUN 02, 2006, Location: Nice, FRANCE, Patrocinadores: European Mat Res Soc

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Publication Identifiers

DOI: 10.1016/j.spmi.2006.07.016

SCOPUS: 2-s2.0-33845188597

Wos: WOS:000243208200018

Source Identifiers

ISSN: 0749-6036

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The Structure of Crystallographic Damage in Gan Formed During Rare Earth Ion Implantation with and Without an Ultrathin Aln Capping Layer

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The Structure of Crystallographic Damage in Gan Formed During Rare Earth Ion Implantation with and Without an Ultrathin Aln Capping Layer

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