Vacancy-Dioxygen Centers in Si-Rich Sige Alloys

AuthID
 P-004-J99
10
Author(s)
Khirunenko, LI
·
Sosnin, MG
·
Riemann, H
Tipo de Documento
Article
Year published
2006
Publicado
in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, ISSN: 1369-8001
Volume: 9, Número: 4-5, Páginas: 520-524 (5)
Conference
Symposium on Germanium-Based Semiconductors from Materials to Devices Held at the 2006 Emrs Spring Meeting, Date: MAY 29-JUN 02, 2006, Location: Nice, FRANCE, Patrocinadores: European Mat Res Soc
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Publication Identifiers
SCOPUS: 2-s2.0-33845303575
Wos: WOS:000243574100019
Source Identifiers
ISSN: 1369-8001
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