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Lattice Order in Thulium-Doped Gan Epilayers: In Situ Doping Versus Ion Implantation

AuthID
P-004-M33

Author(s)

Hernandez, S

Cusco, R

Artus, L

Nogales, E

Martin, RW

O'Donnell, KP

Halambalakis, G

Briot, O

Lorenz, K

Alves, E

Document Type

Article

Year published

2006

Published

in OPTICAL MATERIALS, ISSN: 0925-3467

Volume: 28, Issue: 6-7, Pages: 771-774 (4)

Conference

Meeting of the European-Materials-Research-Society, Date: MAY 30-JUN 03, 2005, Location: Strasbourg, FRANCE, Sponsors: European Materials Res Soc

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Publication Identifiers

DOI: 10.1016/j.optmat.2005.09.021

Scopus: 2-s2.0-33644892777

Wos: WOS:000236916500041

Source Identifiers

ISSN: 0925-3467

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Lattice Order in Thulium-Doped Gan Epilayers: In Situ Doping Versus Ion Implantation

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