Early Sio2 Precipitates in Si: Vacancy-Oxygen Versus Interstitial-Oxygen Clusters

AuthID
 P-004-MK7
6
Author(s)
Oberg, S
·
1
Editor(es)
Oshiyama A.Maeda K.Itoh K.M.Katayama-Yoshida H.
Tipo de Documento
Article
Year published
2006
Publicado
in PHYSICA B-CONDENSED MATTER, ISSN: 0921-4526
Volume: 376, Número: 1, Páginas: 109-112 (4)
Conference
23Rd International Conference on Defects in Semiconductors, Date: JUL 24-29, 2005, Location: Awaji Isl, JAPAN
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Scopus®
Crossref®11
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Publication Identifiers
SCOPUS: 2-s2.0-33645237941
Wos: WOS:000237329500027
Source Identifiers
ISSN: 0921-4526
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