Depth Profiling of Ion-Implanted Alinn Using Time-Of-Flight Secondary Ion Mass Spectrometry and Cathodoluminescence

AuthID
 P-007-FY5
15
Author(s)
Rading, D
·
Kersting, R
·
Tallarek, E
·
Nogales, E
·
Amabile, D
·
Wang, K
·
Katchkanov, V
·
Trager Cowan, C
·
O'Donnell, KP
·
Matias, V
·
Vantomme, A
·
2
Editor(es)
Hildebrandt, S; Stutzmann, M
Tipo de Documento
Proceedings Paper
Year published
2006
Publicado
in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6 in PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, ISSN: 1610-1634
Volume: 3, Número: 6, Páginas: 1927-1930 (4)
Conference
6Th International Conference on Nitride Semiconductors (Icns-6), Date: AUG 28-SEP 02, 2005, Location: Bremen, GERMANY
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Publication Identifiers
SCOPUS: 2-s2.0-33746364178
Wos: WOS:000239543600129
Source Identifiers
ISSN: 1610-1634
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