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An In-Defect Complex as a Possible Explanation for High Luminous Efficacy of Ingan and Alinn Based Devices

AuthID
P-007-XC5

Author(s)

Kessler, P

Lorenz, K

Miranda, SMC

Correia, JG

Johnston, K

Vianden, R

Group Author(s)

ISOLDE Collaboration

Tipo de Documento

Proceedings Paper

Year published

2010

Publicado

in HYPERFINE INTERACTIONS, ISSN: 0304-3843

Volume: 197, Número: 1-3, Páginas: 187-191 (5)

Conference

3Rd Joint International Conference on Hyperfine Interactions (Hfi) / International Symposium on Nuclear Quadrupole Interactions (Nqi), Date: SEP 12-17, 2010, Location: CERN, Geneva, SWITZERLAND, Host: CERN

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Publication Identifiers

DOI: 10.1007/s10751-010-0200-9

SCOPUS: 2-s2.0-79951552541

Wos: WOS:000313360900032

Source Identifiers

ISSN: 0304-3843

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An In-Defect Complex as a Possible Explanation for High Luminous Efficacy of Ingan and Alinn Based Devices

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An In-Defect Complex as a Possible Explanation for High Luminous Efficacy of Ingan and Alinn Based Devices

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