Photoluminescence and Lattice Location of Eu and Pr Implanted Gan Samples

AuthID
 P-000-SMT
8
Author(s)
Vianden, R
·
Tipo de Documento
Article
Year published
2001
Publicado
in PHYSICA B-CONDENSED MATTER, ISSN: 0921-4526
Volume: 308, Páginas: 22-25 (4)
Conference
21St International Conference on Defects in Semiconductors, Date: JUL 16-20, 2001, Location: GIESSEN, GERMANY
Indexing
Wos®
Scopus®
Crossref®78
Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-0345409195
Wos: WOS:000173660100006
Source Identifiers
ISSN: 0921-4526
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