Radiation-Induced Defect Reactions in Tin-Doped Ge Crystals

AuthID
 P-008-0G6
11
Author(s)
Markevich, VP
·
Peaker, AR
·
Litvinov, VV
·
Pokotilo, YM
·
Lastovskii, SB
·
Rayson, MJ
·
Briddon, P
·
Tipo de Documento
Proceedings Paper
Year published
2011
Publicado
in Diffusion and Defect Data Pt.B: Solid State Phenomena, ISSN: 1012-0394
Volume: 178-179, Páginas: 392-397
Conference
14Th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor Technology, Gadest2011, Date: 25 September 2011 through 30 September 2011, Location: Loipersdorf
Indexing
Scopus®
Crossref®3
Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-80053289696
Source Identifiers
ISSN: 1012-0394
Export Publication Metadata
Lista Marked
 Adicionar à lista Marked
Info
At this moment we don't have any links to full text documens.

Um espaço para investigadores e suas Instituições

Links Úteis

Ajuda

© 2024 CRACS & Inesc TEC - All Rights Reserved Política de Privacidade | Terms of Service