Publicações

Europium-Doped Gan(Mg): Beyond the Limits of the Light-Emitting Diode

AuthID
P-009-C4F

Author(s)

O'Donnell, KP

Edwards, PR

Kappers, MJ

Lorenz, K

Alves, E

Bockowski, M

Editor(es)

Eddy, CR; Kuball, M; Koleske, DD; Amano, H

Tipo de Documento

Proceedings Paper

Year published

2014

Publicado

in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4 in Physica Status Solidi C-Current Topics in Solid State Physics, ISSN: 1862-6351

Volume: 11, Número: 3-4, Páginas: 662-665 (4)

Conference

10Th International Conference on Nitride Semiconductors (Icns), Date: AUG 25-30, 2013, Location: Washington, DC, Patrocinadores: Off Naval Res, Army Res Off, Sandia Natl Lab, Natl Sci Fdn, Zeiss, Nichia, Laytec, Nitride Semicond Fdn Japan, Aixtron, Osram, Plasma Therm, Crystal IS, Dow Elect Mat

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