Doping of Ga2O3 Bulk Crystals and Nws by Ion Implantation

AuthID
 P-009-HQ5
18
Author(s)
Lopez, I
·
Nogales, E
·
Mendez, B
·
Piqueras, J
·
Barbosa, MB
·
Villora, EG
·
Shimamura, K
3
Editor(es)
Teherani, FH; Look, DC; Rogers, DJ
Tipo de Documento
Proceedings Paper
Year published
2014
Publicado
in OXIDE-BASED MATERIALS AND DEVICES V in Proceedings of SPIE, ISSN: 0277-786X
Volume: 8987
Conference
Annual Conference on Oxide-Based Materials and Devices V Held at Spie Photonics West, Date: FEB 02-05, 2014, Location: San Francisco, CA, Patrocinadores: SPIE
Indexing
Wos®
Scopus®
Crossref®11
Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-84901815983
Wos: WOS:000337582100017
Source Identifiers
ISSN: 0277-786X
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