Hydrogen Passivation of Titanium Impurities in Silicon: Effect of Doping Conditions

AuthID
 P-009-SPY
5
Author(s)
Santos, P
·
Rayson, MJ
·
Tipo de Documento
Article
Year published
2014
Publicado
in APPLIED PHYSICS LETTERS, ISSN: 0003-6951
Volume: 105, Número: 3, Páginas: 032108 (4)
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Publication Identifiers
SCOPUS: 2-s2.0-84925863870
Wos: WOS:000341152300043
Source Identifiers
ISSN: 0003-6951
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