Publicações

Temperature-Dependent Hysteresis of the Emission Spectrum of Eu-Implanted, Mg-Doped Hvpe Gan

AuthID
P-009-TZ7

Author(s)

O'Donnell, KP

Martin, RW

Edwards, PR

Lorenz, K

Alves, E

Bockowski, M

Editor(es)

Ihn, T; Rossler, C; Kozikov, A

Tipo de Documento

Proceedings Paper

Year published

2013

Publicado

in PHYSICS OF SEMICONDUCTORS in AIP Conference Proceedings, ISSN: 0094-243X

Volume: 1566, Páginas: 63-+ (2)

Conference

31St International Conference on the Physics of Semiconductors (Icps), Date: JUL 29-AUG 03, 2012, Location: Zurich, SWITZERLAND, Patrocinadores: ETH Zurich, ETH Board, Int Union Pure & Appl Phys, Swiss Natl Sci Fdn, Swiss Natl Ctr Competence Res, Quantum Sci & Technol, Swiss Natl Ctr Competence Res, Quantum Photon, SPECS, SENSIRION, Swiss Airlines, ATTOCUBE, IBM, ID Quantique

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