Rbs/Channeling Study of Er Doped Gan Films Grown by Mbe on Si(111) Substrates

AuthID
P-001-0RQ
7
Author(s)
Vianden, R
·
Birkhahn, R
·
Steckl, AJ
·
da Silva, MF
·
Tipo de Documento
Article
Year published
2000
Publicado
in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ISSN: 0168-583X
Volume: 161, Páginas: 946-951 (6)
Conference
14Th International Conference on Ion Beam Analysis/6Th European Conference on Accelerators in Applied Research and Technology, Date: JUL 26-30, 1999, Location: DRESEDEN, GERMANY, Patrocinadores: Res Ctr Rossendorf, Inst Ion Beam Phys & Mat Res
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-0033878262
Wos: WOS:000086204100179
Source Identifiers
ISSN: 0168-583X
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