Operational Stability of Solution Based Zinc Tin Oxide/Sio2 Thin Film Transistors Under Gate Bias Stress

AuthID
 P-00A-D2Z
8
Author(s)
Tipo de Documento
Article
Year published
2015
Publicado
in APL MATERIALS, ISSN: 2166-532X
Volume: 3, Número: 6, Páginas: 062804 (6)
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Publication Identifiers
SCOPUS: 2-s2.0-84928798683
Wos: WOS:000357608900027
Source Identifiers
ISSN: 2166-532X
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