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Strain Relaxation in Gan Films as a Function of Growth Direction and Buffer Layer Measured by Raman Spectroscopy

AuthID
P-00F-GTF

Author(s)

Seitz, R

Monteiro, T

Pereira, E

Di Forte Poisson, M

Tipo de Documento

Article

Year published

1999

Publicado

in Physica Status Solidi (A) Applied Research, ISSN: 0031-8965

Volume: 176, Número: 1, Páginas: 661-664

Conference

Proceedings of the 1999 3Rd International Conference on Nitride Semiconductors (Icns'99), Date: 4 July 1999 through 9 July 1999, Location: Montpellier, France

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Publication Identifiers

DOI: 10.1002/(sici)1521-396x(199911)176:1<661::aid-pssa661>3.0.co;2-i

SCOPUS: 2-s2.0-0033221907

Source Identifiers

ISSN: 0031-8965

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Strain Relaxation in Gan Films as a Function of Growth Direction and Buffer Layer Measured by Raman Spectroscopy

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Strain Relaxation in Gan Films as a Function of Growth Direction and Buffer Layer Measured by Raman Spectroscopy

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