Publicações

Study of Sinx : H-Y Passivant Layers for Algan/Gan High Electron Mobility Transistors

AuthID
P-00F-KE8

Author(s)

Redondo Cubero, A

Gago, R

Romero, MF

Jimenez, A

Gonzalez Posada, F

Brana, AF

Munoz, E

Editor(es)

Saarinen, M; Leitch, A; Botha, R

Tipo de Documento

Proceedings Paper

Year published

2008

Publicado

in PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 2 2008 in PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, ISSN: 1610-1634

Volume: 5, Número: 2, Páginas: 518-521 (4)

Conference

E-Mrs 2007 Spring Meeting-Symposium F Novel Gain Materials and Devices Based on Iii-N-V Compounds, Date: MAY 28-JUN 01, 2007, Location: Strasbourg, FRANCE

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