Donor Concentration-Dependence Of Gap Luminescence

AuthID
P-00F-KVV
4
Author(s)
PEREIRA, E
·
DOMINGUESADAME, F
·
PIQUERAS, J
1
Editor(es)
Taguchi, T
Tipo de Documento
Proceedings Paper
Year published
1993
Publicado
in SHALLOW IMPURITIES IN SEMICONDUCTORS in MATERIALS SCIENCE FORUM, ISSN: 0255-5476
Volume: 117, Páginas: 375-380 (6)
Conference
5Th International Conf On Shallow Impurities In Semiconductors : Physics And Control Of Impurities, Date: AUG 05-08, 1992, Location: KOBE, JAPAN, Patrocinadores: PORTOPIA EIGHTY ONE MEM FDN, FUJITSU, HITACHI, IBM JAPAN, JAPAN BROADCASTING CORP, KOBE STEEL, KOMATSU ELECTR MET, MATSUSHITA ELECT IND, MITSUBISHI ELECT CORP, NIPPON MIN CO
Indexing
Publication Identifiers
Wos: WOS:A1993BZ20P00060
Source Identifiers
ISSN: 0255-5476
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