Comprehensive Numerical Simulation of Defect Density and Temperature-Dependent Transport Properties in Hydrogenated Amorphous Silicon

AuthID
 P-00F-M1N
2
Author(s)
Wang, F
·
Tipo de Documento
Article
Year published
1995
Publicado
in Physical Review B, ISSN: 0163-1829
Volume: 52, Número: 20, Páginas: 14586-14597
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Publication Identifiers
SCOPUS: 2-s2.0-0001124136
Source Identifiers
ISSN: 0163-1829
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