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Self-Consistent Depth Profiling and Imaging of Gan-Based Transistors Using Ion Microbeams

AuthID
P-00G-49G

Author(s)

Redondo Cubero, A

Corregidor, V

Vazquez, L

Alves, LC

Tipo de Documento

Article

Year published

2015

Publicado

in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ISSN: 0168-583X

Volume: 348, Páginas: 246-250 (5)

Conference

14Th International Conference on Nuclear Microprobe Technology and Applications (Icnmta) / Workshop on Proton Beam Writing, Date: JUL 07-11, 2014, Location: Padova, ITALY, Patrocinadores: Ist Nazl Fis Nucl

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Publication Identifiers

DOI: 10.1016/j.nimb.2014.11.040

SCOPUS: 2-s2.0-84930940373

Wos: WOS:000354140900050

Source Identifiers

ISSN: 0168-583X

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Self-Consistent Depth Profiling and Imaging of Gan-Based Transistors Using Ion Microbeams

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Self-Consistent Depth Profiling and Imaging of Gan-Based Transistors Using Ion Microbeams

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