Annealing Behaviour of Gan After Implantation with Hafnium and Indium

AuthID
P-00G-9QC
3
Author(s)
Ruske, F
·
Vianden, R
Tipo de Documento
Article
Year published
2001
Publicado
in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, ISSN: 0370-1972
Volume: 228, Número: 1, Páginas: 331-335 (5)
Conference
4Th International Conference on Nitride Semiconductors (Icns-4), Date: JUL 16-20, 2001, Location: DENVER, CO
Indexing
Publication Identifiers
Wos: WOS:000172513100071
Source Identifiers
ISSN: 0370-1972
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