Effect of the Growth Temperature and the Aln Mole Fraction on In Incorporation and Properties of Quaternary Iii-Nitride Layers Grown by Molecular Beam Epitaxy

AuthID
 P-00H-M9D
10
Author(s)
Fernández-Garrido, S
·
Gago, R
·
Bertram, F
·
Christen, J
·
Luna, E
·
Trampert, A
·
Pereiro, J
·
Muñoz, E
·
Calleja, E
Tipo de Documento
Article
Year published
2008
Publicado
in J. Appl. Phys. - Journal of Applied Physics, ISSN: 0021-8979
Volume: 104, Número: 8, Páginas: 083510
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ISSN: 0021-8979
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