Influence of Lateral and In-Depth Metal Segregation on the Patterning of Ohmic Contacts for Gan-Based Devices

AuthID
 P-00H-P7Z
8
Author(s)
Vázquez, L
·
Romero, MF
·
Pantellini, A
·
Lanzieri, C
·
Muñoz, E
Tipo de Documento
Article
Year published
2014
Publicado
in Journal of Physics D: Applied Physics - J. Phys. D: Appl. Phys., ISSN: 0022-3727
Volume: 47, Número: 18, Páginas: 185302
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ISSN: 0022-3727
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