Role of Oxygen Partial Pressure on the Properties of Doped Silicon Oxycarbide Microcrystalline Layers Produced by Spatial Separation Techniques

AuthID
 P-00H-WX5
1
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Tipo de Documento
Article
Year published
1995
Publicado
in Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, ISSN: 07342101
Volume: 13, Número: 4, Páginas: 2199-2209 (10)
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SCOPUS: 2-s2.0-21844500459
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ISSN: 07342101
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