Metastable Vo2 Complexes in Silicon: Experimental and Theoretical Modeling Studies

AuthID
 P-000-5SN
8
Author(s)
Murin, LI
·
Lindstrom, J
·
Markevich, VP
·
Medvedeva, IF
·
5
Editor(es)
Pichaud, B; Claverie, A; Alquier, D; Richter, H; Kittler, M
Tipo de Documento
Article
Year published
2005
Publicado
in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI in SOLID STATE PHENOMENA, ISSN: 1012-0394
Volume: 108-109, Páginas: 223-228 (6)
Conference
11Th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (Gadest 2005), Date: SEP 25-30, 2005, Location: Giens, FRANCE, Patrocinadores: TECSEN, CEMES CNRS, LMP
Indexing
Wos®
Scopus®
Publication Identifiers
SCOPUS: 2-s2.0-33750306713
Wos: WOS:000234198300035
Source Identifiers
ISSN: 1012-0394
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