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Electrical Levels and Diffusion Barriers of Early 3D and 4D Transition Metals in Silicon

AuthID
P-00K-2D6

Author(s)

Marinopoulos, AG

Santos, P

Coutinho, J

Editor(es)

Pichler P.Pichler P.

Tipo de Documento

Proceedings Paper

Year published

2016

Publicado

in Solid State Phenomena, ISSN: 1662-9779

Volume: 242, Páginas: 264-270

Conference

16Th International Conference on Gettering and Defect Engineering in Semiconductor Technology, Gadest 2015, Date: 20 September 2015 through 25 September 2015

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Scopus^®

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Google Scholar^®

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Publication Identifiers

DOI: 10.4028/www.scientific.net/ssp.242.264

SCOPUS: 2-s2.0-84953931467

Source Identifiers

ISSN: 1662-9779

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Electrical Levels and Diffusion Barriers of Early 3D and 4D Transition Metals in Silicon

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Electrical Levels and Diffusion Barriers of Early 3D and 4D Transition Metals in Silicon

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