Radiation Effects in Si-Ge Quantum Size Structure (Review)

AuthID
 P-002-0QD
1
Author(s)
Tipo de Documento
Article
Year published
2013
Publicado
in SEMICONDUCTORS, ISSN: 1063-7826
Volume: 47, Número: 2, Páginas: 217-227 (11)
Conference
9Th International Conference on Silicon, Date: JUL 09-13, 2012, Location: St. Petersburg, RUSSIA
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Scopus®
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Publication Identifiers
SCOPUS: 2-s2.0-84874226380
Wos: WOS:000315166700005
Source Identifiers
ISSN: 1063-7826
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