Powerful Recombination Centers Resulting from Reactions of Hydrogen with Carbon-Oxygen Defects in N-Type Czochralski-Grown Silicon

AuthID
P-00M-XFY
12
Author(s)
Vaqueiro Contreras, M
·
Markevich, VP
·
Halsall, MP
·
Peaker, AR
·
Santos, P
·
Oberg, S
·
Murin, LI
·
Falster, R
·
Binns, J
·
Monakhov, EV
·
Svensson, BG
Tipo de Documento
Article
Year published
2017
Publicado
in PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, ISSN: 1862-6254
Volume: 11, Número: 8
Indexing
Publication Identifiers
Wos: WOS:000407919400003
Source Identifiers
ISSN: 1862-6254
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