TUTORIAL: Junction Spectroscopy Techniques and Deep-Level Defects in Semiconductors

AuthID
P-00N-GRP
3
Author(s)
Peaker, AR
·
Markevich, VP
·
Tipo de Documento
Article
Year published
2018
Publicado
in JOURNAL OF APPLIED PHYSICS, ISSN: 0021-8979
Volume: 123, Número: 16
Conference
29Th International Conference on Defects in Semiconductors (Icds), Date: JUL 31-AUG 04, 2017, Location: Matsue, JAPAN
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-85040621526
Wos: WOS:000431147200089
Source Identifiers
ISSN: 0021-8979
Export Publication Metadata
Info
At this moment we don't have any links to full text documens.