Double Negatively Charged Carbon Vacancy at the H- and K-Sites in 4H-Sic: Combined Laplace-Dlts and Dft Study

AuthID
 P-00N-MWN
12
Author(s)
Capan, I
·
Brodar, T
·
Pastuovic, Z
·
Siegele, R
·
Ohshima, T
·
Sato, S
·
Makino, T
·
Snoj, L
·
Radulovic, V
·
Demmouche, K
Tipo de Documento
Article
Year published
2018
Publicado
in JOURNAL OF APPLIED PHYSICS, ISSN: 0021-8979
Volume: 123, Número: 16
Conference
29Th International Conference on Defects in Semiconductors (Icds), Date: JUL 31-AUG 04, 2017, Location: Matsue, JAPAN
Indexing
Wos®
Scopus®
Crossref®38
Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-85042229849
Wos: WOS:000431147200127
Source Identifiers
ISSN: 0021-8979
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