Measuring Strain Caused by Ion Implantation in Gan

AuthID
 P-00Q-F2N
6
Author(s)
Mendes, P
·
Schwaiger, S
·
Scholz, F
·
Magalhaes, S
Tipo de Documento
Article
Year published
2019
Publicado
in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, ISSN: 1369-8001
Volume: 98, Páginas: 95-99 (5)
Indexing
Wos®
Scopus®
Crossref®15
Handle®
Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-85063759927
Wos: WOS:000465188500016
Source Identifiers
ISSN: 1369-8001
Export Publication Metadata
Lista Marked
 Adicionar à lista Marked
Info
At this moment we don't have any links to full text documens.

Um espaço para investigadores e suas Instituições

Links Úteis

Ajuda

© 2024 CRACS & Inesc TEC - All Rights Reserved Política de Privacidade | Terms of Service