Influence of Hydrogen Implantation on Emission from the Silicon Vacancy in 4H-Sic

AuthID
 P-00R-TSF
4
Author(s)
Bathen, ME
·
Galeckas, A
·
Vines, L
Tipo de Documento
Article
Year published
2020
Publicado
in JOURNAL OF APPLIED PHYSICS, ISSN: 0021-8979
Volume: 127, Número: 8
Indexing
Wos®
Scopus®
Crossref®16
Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-85080072219
Wos: WOS:000519624400001
Source Identifiers
ISSN: 0021-8979
Export Publication Metadata
Lista Marked
 Adicionar à lista Marked
Info
At this moment we don't have any links to full text documens.

Um espaço para investigadores e suas Instituições

Links Úteis

Ajuda

© 2024 CRACS & Inesc TEC - All Rights Reserved Política de Privacidade | Terms of Service