First-Principles Calculations of Stark Shifts of Electronic Transitions for Defects in Semiconductors: the Si Vacancy in 4H-Sic

AuthID
 P-00T-7A5
3
Author(s)
Bathen, ME
·
Vines, L
·
Tipo de Documento
Article
Year published
2020
Publicado
in JOURNAL OF PHYSICS-CONDENSED MATTER, ISSN: 0953-8984
Volume: 33, Número: 7, Páginas: 075502 (8)
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Scopus®
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Publication Identifiers
SCOPUS: 2-s2.0-85098256426
Wos: WOS:000599113500001
Source Identifiers
ISSN: 0953-8984
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