Acceptor-Oxygen Defects in Silicon: The Electronic Properties of Centers Formed by Boron, Gallium, Indium, and Aluminum Interactions with the Oxygen Dimer

AuthID
 P-00V-YV2
11
Author(s)
de Guzman, JAT
·
Markevich, VP
·
Hawkins, ID
·
Ayedh, HM
·
Binns, J
·
Abrosimov, NV
·
Lastovskii, SB
·
Crowe, IF
·
Halsall, MP
·
Peaker, AR
Tipo de Documento
Article
Year published
2021
Publicado
in JOURNAL OF APPLIED PHYSICS, ISSN: 0021-8979
Volume: 130, Número: 24
Indexing
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Scopus®
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Publication Identifiers
SCOPUS: 2-s2.0-85122520510
Wos: WOS:000739055500005
Source Identifiers
ISSN: 0021-8979
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