A Mechanism for Damage Formation in Gan During Rare Earth Ion Implantation at Medium Range Energy and Room Temperature

AuthID
 P-002-XRW
3
Author(s)
Lacroix, B
·
Tipo de Documento
Article
Year published
2011
Publicado
in JOURNAL OF APPLIED PHYSICS, ISSN: 0021-8979
Volume: 109, Número: 1, Páginas: 013506 (7)
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Publication Identifiers
SCOPUS: 2-s2.0-78751481423
Wos: WOS:000286219300031
Source Identifiers
ISSN: 0021-8979
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