Combining X-Ray Real and Reciprocal Space Mapping Techniques to Explore the Epitaxial Growth of Semiconductors

AuthID
 P-00Y-AK7
9
Author(s)
Magalhães, S
·
Cabaço, JS
·
Concepción, O
·
Buca, D
·
Stachowicz, M
·
Oliveira, F
·
Cerqueira, MF
·
Tipo de Documento
Article
Year published
2023
Publicado
in Journal of Physics D: Applied Physics, ISSN: 0022-3727
Volume: 56, Número: 24, Páginas: 245102
Indexing
Scopus®
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Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-85152903211
Source Identifiers
ISSN: 0022-3727
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