The Characterization of N Interstitials and Dangling Bond Point Defects on Ion-Implanted Gan Nanowires Studied by Photoluminescence and X-Ray Absorption Spectroscopy

AuthID
 P-003-1J2
8
Author(s)
Lee, KH
·
Chiou, JW
·
Chen, JM
·
Lee, JF
·
Braud, A
·
Chen, IG
Tipo de Documento
Article
Year published
2010
Publicado
in JOURNAL OF THE AMERICAN CERAMIC SOCIETY, ISSN: 0002-7820
Volume: 93, Número: 11, Páginas: 3531-3534 (4)
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Publication Identifiers
SCOPUS: 2-s2.0-78549244844
Wos: WOS:000283987400002
Source Identifiers
ISSN: 0002-7820
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