Virginia Chu
AuthID: R-000-HJ2
171
TITLE: ANNEALING KINETICS OF A-SI-H DEPOSITED BY CONCENTRIC-ELECTRODE RF GLOW-DISCHARGE AT ROOM-TEMPERATURE Full Text
AUTHORS: CONDE, JP ; CHAN, KK; BLUM, JM; ARIENZO, M; MONTEIRO, PA; FERREIRA, JA; CHU, V; WYRSH, N;
PUBLISHED: 1993, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 73, ISSUE: 4
AUTHORS: CONDE, JP ; CHAN, KK; BLUM, JM; ARIENZO, M; MONTEIRO, PA; FERREIRA, JA; CHU, V; WYRSH, N;
PUBLISHED: 1993, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 73, ISSUE: 4
INDEXED IN:
Scopus
WOS


IN MY:
ORCID

172
TITLE: Annealing kinetics of a-Si:H deposited by concentric-electrode rf glow discharge at room temperature Full Text
AUTHORS: Conde, JP; Chan, KK; Blum, JM; Arienzo, M; Monteiro, PA; Ferreira, JA; Chu, V; Wyrsh, N;
PUBLISHED: 1993, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 73, ISSUE: 4
AUTHORS: Conde, JP; Chan, KK; Blum, JM; Arienzo, M; Monteiro, PA; Ferreira, JA; Chu, V; Wyrsh, N;
PUBLISHED: 1993, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 73, ISSUE: 4
174
TITLE: AMORPHOUS-SILICON GERMANIUM THIN-FILM PHOTODETECTOR ARRAY
AUTHORS: SHEN, DS; CONDE, JP ; CHU, V; ALJISHI, S; LIU, JZ; WAGNER, S;
PUBLISHED: 1992, SOURCE: IEEE ELECTRON DEVICE LETTERS, VOLUME: 13, ISSUE: 1
AUTHORS: SHEN, DS; CONDE, JP ; CHU, V; ALJISHI, S; LIU, JZ; WAGNER, S;
PUBLISHED: 1992, SOURCE: IEEE ELECTRON DEVICE LETTERS, VOLUME: 13, ISSUE: 1
INDEXED IN:
Scopus
WOS


IN MY:
ORCID

175
TITLE: Amorphous silicon-germanium thin-film photodetector array
AUTHORS: D.S Shen; J.P Conde; Chu, V; Aljishi, S; J.Z Liu; Wagner, S;
PUBLISHED: 1992, SOURCE: IEEE Electron Device Lett. - IEEE Electron Device Letters, VOLUME: 13, ISSUE: 1
AUTHORS: D.S Shen; J.P Conde; Chu, V; Aljishi, S; J.Z Liu; Wagner, S;
PUBLISHED: 1992, SOURCE: IEEE Electron Device Lett. - IEEE Electron Device Letters, VOLUME: 13, ISSUE: 1
176
TITLE: OPTOELECTRONIC PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON FILMS DEPOSITED UNDER NEGATIVE SUBSTRATE BIAS Full Text
AUTHORS: CABARROCAS, PRI; MORIN, P; CHU, V; CONDE, JP ; LIU, JZ; PARK, HR; WAGNER, S;
PUBLISHED: 1991, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 69, ISSUE: 5
AUTHORS: CABARROCAS, PRI; MORIN, P; CHU, V; CONDE, JP ; LIU, JZ; PARK, HR; WAGNER, S;
PUBLISHED: 1991, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 69, ISSUE: 5
INDEXED IN:
Scopus
WOS


IN MY:
ORCID

177
TITLE: In situ ellipsometric study of amorphous silicon/amorphous silicon-carbon interfaces Full Text
AUTHORS: Chu, V; Fang, M; Drevillon, B;
PUBLISHED: 1991, SOURCE: Journal of Applied Physics, VOLUME: 69, ISSUE: 5
AUTHORS: Chu, V; Fang, M; Drevillon, B;
PUBLISHED: 1991, SOURCE: Journal of Applied Physics, VOLUME: 69, ISSUE: 5
178
TITLE: An in situ ellipsometry study of amorphous silicon/amorphous germanium multilayers Full Text
AUTHORS: Chu, V; Fang, M; Drevillon, B;
PUBLISHED: 1991, SOURCE: Journal of Applied Physics, VOLUME: 69, ISSUE: 1
AUTHORS: Chu, V; Fang, M; Drevillon, B;
PUBLISHED: 1991, SOURCE: Journal of Applied Physics, VOLUME: 69, ISSUE: 1
179
TITLE: Growth-induced surface state in hydrogenated and fluorinated amorphous silicon Full Text
AUTHORS: Maruyama, A; Liu, JZ; Chu, V; Shen, DS; Wagner, S;
PUBLISHED: 1991, SOURCE: Journal of Applied Physics, VOLUME: 69, ISSUE: 4
AUTHORS: Maruyama, A; Liu, JZ; Chu, V; Shen, DS; Wagner, S;
PUBLISHED: 1991, SOURCE: Journal of Applied Physics, VOLUME: 69, ISSUE: 4
180
TITLE: Optoelectronic properties of hydrogenated amorphous silicon films deposited under negative substrate bias Full Text
AUTHORS: Roca i Cabarrocas, P; Morin, P; Chu, V; Conde, JP; Liu, JZ; Park, HR; Wagner, S;
PUBLISHED: 1991, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 69, ISSUE: 5
AUTHORS: Roca i Cabarrocas, P; Morin, P; Chu, V; Conde, JP; Liu, JZ; Park, HR; Wagner, S;
PUBLISHED: 1991, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 69, ISSUE: 5