B. Hamilton
AuthID: R-00F-SK0
1
TITLE: The trivacancy and trivacancy-oxygen family of defects in silicon
AUTHORS: Markevich, VP; Peaker, AR; Hamilton, B; Lastovskii, SB; Murin, LI; Coutinho, J ; Rayson, MJ; Briddon, PR; Svensson, BG;
PUBLISHED: 2014, SOURCE: 15th International Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XV, VOLUME: 205-206
AUTHORS: Markevich, VP; Peaker, AR; Hamilton, B; Lastovskii, SB; Murin, LI; Coutinho, J ; Rayson, MJ; Briddon, PR; Svensson, BG;
PUBLISHED: 2014, SOURCE: 15th International Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XV, VOLUME: 205-206
2
TITLE: Titanium in silicon: Lattice positions and electronic properties Full Text
AUTHORS: Markevich, VP; Leonard, S; Peaker, AR; Hamilton, B; Marinopoulos, AG; Coutinho, J;
PUBLISHED: 2014, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 104, ISSUE: 15
AUTHORS: Markevich, VP; Leonard, S; Peaker, AR; Hamilton, B; Marinopoulos, AG; Coutinho, J;
PUBLISHED: 2014, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 104, ISSUE: 15
3
TITLE: Electronic and dynamical properties of the silicon trivacancy
AUTHORS: Coutinho, J ; Markevich, VP; Peaker, AR; Hamilton, B; Lastovskii, SB; Murin, LI; Svensson, BJ; Rayson, MJ; Briddon, PR;
PUBLISHED: 2012, SOURCE: PHYSICAL REVIEW B, VOLUME: 86, ISSUE: 17
AUTHORS: Coutinho, J ; Markevich, VP; Peaker, AR; Hamilton, B; Lastovskii, SB; Murin, LI; Svensson, BJ; Rayson, MJ; Briddon, PR;
PUBLISHED: 2012, SOURCE: PHYSICAL REVIEW B, VOLUME: 86, ISSUE: 17
4
TITLE: Reconfigurations and diffusion of trivacancy in silicon Full Text
AUTHORS: Markevich, VP; Peaker, AR; Hamilton, B; Lastovskii, SB; Murin, LI; Coutinho, J ; Markevich, AV; Rayson, MJ; Briddon, PR; Svensson, BG;
PUBLISHED: 2012, SOURCE: 26th International Conference on Defects in Semiconductors (ICDS) in PHYSICA B-CONDENSED MATTER, VOLUME: 407, ISSUE: 15
AUTHORS: Markevich, VP; Peaker, AR; Hamilton, B; Lastovskii, SB; Murin, LI; Coutinho, J ; Markevich, AV; Rayson, MJ; Briddon, PR; Svensson, BG;
PUBLISHED: 2012, SOURCE: 26th International Conference on Defects in Semiconductors (ICDS) in PHYSICA B-CONDENSED MATTER, VOLUME: 407, ISSUE: 15
5
TITLE: The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells? Full Text
AUTHORS: Murin, LI; Tolkacheva, EA; Markevich, VP; Peaker, AR; Hamilton, B; Monakhov, E; Svensson, BG; Lindstrom, JL; Santos, P; Coutinho, J ; Carvalho, A;
PUBLISHED: 2011, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 98, ISSUE: 18
AUTHORS: Murin, LI; Tolkacheva, EA; Markevich, VP; Peaker, AR; Hamilton, B; Monakhov, E; Svensson, BG; Lindstrom, JL; Santos, P; Coutinho, J ; Carvalho, A;
PUBLISHED: 2011, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 98, ISSUE: 18
6
TITLE: Tin-vacancy complex in germanium Full Text
AUTHORS: Markevich, VP; Peaker, AR; Hamilton, B; Litvinov, VV; Yu. M Pokotilo; Lastovskii, SB; Coutinho, J ; Carvalho, A; Rayson, MJ; Briddon, PR;
PUBLISHED: 2011, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 109, ISSUE: 8
AUTHORS: Markevich, VP; Peaker, AR; Hamilton, B; Litvinov, VV; Yu. M Pokotilo; Lastovskii, SB; Coutinho, J ; Carvalho, A; Rayson, MJ; Briddon, PR;
PUBLISHED: 2011, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 109, ISSUE: 8
7
TITLE: Structure and electronic properties of trivacancy and trivacancy-oxygen complexes in silicon Full Text
AUTHORS: Markevich, VP; Peaker, AR; Hamilton, B; Lastovskii, SB; Murin, LI; Coutinho, J ; Torres, VJB ; Dobaczewski, L; Svensson, BG;
PUBLISHED: 2011, SOURCE: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 208, ISSUE: 3
AUTHORS: Markevich, VP; Peaker, AR; Hamilton, B; Lastovskii, SB; Murin, LI; Coutinho, J ; Torres, VJB ; Dobaczewski, L; Svensson, BG;
PUBLISHED: 2011, SOURCE: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 208, ISSUE: 3
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TITLE: Radiation-induced defect reactions in tin-doped Ge crystals
AUTHORS: Vladimir P Markevich; Anthony R Peaker; Bruce Hamilton; Valentin V Litvinov; Yurii M Pokotilo; Alla N Petukh; Stanislav B Lastovskii; Jose Coutinho ; Mark J Rayson; Patrick Briddon; Patrick R Briddon;
PUBLISHED: 2011, SOURCE: 14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST2011 in Diffusion and Defect Data Pt.B: Solid State Phenomena, VOLUME: 178-179
AUTHORS: Vladimir P Markevich; Anthony R Peaker; Bruce Hamilton; Valentin V Litvinov; Yurii M Pokotilo; Alla N Petukh; Stanislav B Lastovskii; Jose Coutinho ; Mark J Rayson; Patrick Briddon; Patrick R Briddon;
PUBLISHED: 2011, SOURCE: 14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST2011 in Diffusion and Defect Data Pt.B: Solid State Phenomena, VOLUME: 178-179
