João Pedro Estrela Rodrigues Conde
AuthID: R-000-7DS
273
TITLE: Annealing kinetics of a-Si:H deposited by concentric-electrode rf glow discharge at room temperature Full Text
AUTHORS: Conde, JP; Chan, KK; Blum, JM; Arienzo, M; Monteiro, PA; Ferreira, JA; Chu, V; Wyrsh, N;
PUBLISHED: 1993, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 73, ISSUE: 4
AUTHORS: Conde, JP; Chan, KK; Blum, JM; Arienzo, M; Monteiro, PA; Ferreira, JA; Chu, V; Wyrsh, N;
PUBLISHED: 1993, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 73, ISSUE: 4
275
TITLE: Deposition of amorphous silicon using a tubular reactor with concentric-electrode confinement Full Text
AUTHORS: Conde, JP; Chan, KK; Blum, JM; Arienzo, M; Cuomo, JJ;
PUBLISHED: 1992, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 71, ISSUE: 8
AUTHORS: Conde, JP; Chan, KK; Blum, JM; Arienzo, M; Cuomo, JJ;
PUBLISHED: 1992, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 71, ISSUE: 8
276
TITLE: The effect of the flow of silane on the properties of a-Si:H deposited by concentric-electrode radio frequency glow-discharge Full Text
AUTHORS: Conde, JP; Chan, KK; Blum, JM; Arienzo, M;
PUBLISHED: 1992, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 71, ISSUE: 8
AUTHORS: Conde, JP; Chan, KK; Blum, JM; Arienzo, M;
PUBLISHED: 1992, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 71, ISSUE: 8
277
TITLE: Optoelectronic properties of hydrogenated amorphous silicon films deposited under negative substrate bias Full Text
AUTHORS: Roca i Cabarrocas, P; Morin, P; Chu, V; Conde, JP; Liu, JZ; Park, HR; Wagner, S;
PUBLISHED: 1991, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 69, ISSUE: 5
AUTHORS: Roca i Cabarrocas, P; Morin, P; Chu, V; Conde, JP; Liu, JZ; Park, HR; Wagner, S;
PUBLISHED: 1991, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 69, ISSUE: 5
278
TITLE: A-SI-H,F-REVERSIBLE-A-SI,GE-H,F GRADED-BANDGAP STRUCTURES
AUTHORS: CONDE, JP; SHEN, DS; CHU, V; WAGNER, S;
PUBLISHED: 1989, SOURCE: INTERNATIONAL TOPICAL CONF ON HYDROGENATED AMORPHOUS SILICON DEVICES AND TECHNOLOGY in IEEE TRANSACTIONS ON ELECTRON DEVICES, VOLUME: 36, ISSUE: 12
AUTHORS: CONDE, JP; SHEN, DS; CHU, V; WAGNER, S;
PUBLISHED: 1989, SOURCE: INTERNATIONAL TOPICAL CONF ON HYDROGENATED AMORPHOUS SILICON DEVICES AND TECHNOLOGY in IEEE TRANSACTIONS ON ELECTRON DEVICES, VOLUME: 36, ISSUE: 12
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ORCID279
TITLE: Photocurrent collection in a Schottky barrier on an amorphous silicon-germanium alloy structure with 1.23 eV optical gap Full Text
AUTHORS: Chu, V; Conde, JP; Shen, DS; Wagner, S;
PUBLISHED: 1989, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 55, ISSUE: 3
AUTHORS: Chu, V; Conde, JP; Shen, DS; Wagner, S;
PUBLISHED: 1989, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 55, ISSUE: 3
280
TITLE: Parallel and Perpendicular Transport in a-Si:H,F/a-Si,Ge:H,F Multilayers
AUTHORS: Conde, JP; Wagner, S;
PUBLISHED: 1989, SOURCE: Amorphous Silicon and Related Materials
AUTHORS: Conde, JP; Wagner, S;
PUBLISHED: 1989, SOURCE: Amorphous Silicon and Related Materials
