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TÃTULO: Influence of time, light and temperature on the electrical properties of zinc oxide TFTs Full Text
AUTORES: Barquinha, P ; Fortunato, E ; Goncalves, A; Pimentel, A ; Marques, A; Pereira, L ; Martins, R ;
PUBLICAÇÃO: 2006, FONTE: Symposium on ZnO and Related Materials held at the 2005 Spring Meeting of the European-Materials-Research-Society in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 39, NÚMERO: 1-4

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TÃTULO: Low temperature processed hafnium oxide: Structural and electrical properties Full Text
AUTORES: Pereira, L ; Barquinha, P ; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2006, FONTE: Symposium on Characterization of High-K Dielectric Materials held at the 2006 E-MRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 6

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TÃTULO: Multicomponent wide band gap oxide semiconductors for thin film transistors
AUTORES: Fortunato, E ; Barquinha, P ; Pereira, L ; Goncalves, G; Martins, R ;
PUBLICAÇÃO: 2006, FONTE: 6th International Meeting on Information Displays/5th International Display Manufacturing Conference (IMID/IDMC 2006) in IMID/IDMC 2006: THE 6TH INTERNATIONAL MEETING ON INFORMATION DISPLAY/THE 5TH INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE, DIGEST OF TECHNICAL PAPERS, VOLUME: 2006

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TÃTULO: Multifunctional thin film zinc oxide semiconductors: Application to electronic devices
AUTORES: Fortunato, E ; Goncalves, A; Marques, A; Pimentel, A ; Barquinha, P ; Aguas, H ; Pereira, L ; Raniero, L; Goncalves, G; Ferreira, I ; Martins, R ;
PUBLICAÇÃO: 2006, FONTE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, NÚMERO: PART 1

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TÃTULO: Poly-Si thin film transistors: Effect of metal thickness on silicon crystallization
AUTORES: Pereira, L ; Barquinha, P ; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2006, FONTE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, NÚMERO: PART 1

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TÃTULO: Some studies on molybdenum doped indium oxide thin films rf sputtered at room temperature
AUTORES: Elangovan, E; Barquinha, P ; Pimental, A; Viana, AS ; Martins, R ; Fortunato, E ;
PUBLICAÇÃO: 2006, FONTE: 2006 MRS Spring Meeting in Materials Research Society Symposium Proceedings, VOLUME: 928

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TÃTULO: Influence of metal induced crystallization parameters on the performance of polycrystalline silicon thin film transistors Full Text
AUTORES: Pereira, L ; Barquinha, P ; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2005, FONTE: 8th International Conference on Polycrystalline Semiconductors in THIN SOLID FILMS, VOLUME: 487, NÚMERO: 1-2

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TÃTULO: Influence of the oxygen/argon ratio on the properties of sputtered hafnium oxide Full Text
AUTORES: Pereira, L ; Barquinha, P ; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2005, FONTE: Symposium on Functional Oxides for Advanced Semiconductor Technologies in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 118, NÚMERO: 1-3

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