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TÍTULO: High field-effect mobility zinc oxide thin film transistors produced at room temperature  Full Text
AUTORES: Fortunato, E ; Pimentel, A ; Pereira, L ; Goncalves, A; Lavareda, G ; Aguas, H ; Ferreira, I ; Carvalho, CN ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338
INDEXADO EM: WOS
252
TÍTULO: High mobility nanocrystalline indium zinc oxide deposited at room temperature
AUTORES: Fortunato, E ; Pimentel, A ; Goncalves, A; Marques, A; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: Symposium on Integration of Advanced Micro-and Nanoelectronic Devices held at the 2004 MRS Spring Meeting in INTEGRATION OF ADVANCED MICRO-AND NANOELECTRONIC DEVICES-CRITICAL ISSUES AND SOLUTIONS, VOLUME: 811
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID
253
TÍTULO: High quality conductive gallium-doped zinc oxide films deposited at room temperature  Full Text
AUTORES: Fortunato, E ; Assuncao, V; Goncalves, A; Marques, A; Aguas, H ; Pereira, L ; Ferreira, I ; Vilarinho, P ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: Symposium on Thin Film and Nano-Structured Materials for Photovoltaics in THIN SOLID FILMS, VOLUME: 451
INDEXADO EM: Scopus WOS CrossRef
254
TÍTULO: Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering  Full Text
AUTORES: Barquinha, P ; Pereira, L ; Aguas, H ; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: Symposium on New Materials in Future Silicon Technology Held at the E-MAR 2004 Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 7, NÚMERO: 4-6
INDEXADO EM: Scopus WOS CrossRef
255
TÍTULO: Influence of the rapid thermal annealing on the properties of thin a-Si films
AUTORES: Nedev, N; Beshkov, G; Fortunato, E ; Georgiev, SS; Ivanov, T; Raniero, L; Zhang, SB; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID
256
TÍTULO: Large area image sensing structures based on a-SiC : H: a dynamic characterization
AUTORES: Fernandes, M ; Vieira, M ; Rodrigues, I; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: Symposium on New Materials and Technologies in Sensor Applications in SENSORS AND ACTUATORS A-PHYSICAL, VOLUME: 113, NÚMERO: 3
INDEXADO EM: Scopus WOS CrossRef Handle
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257
TÍTULO: Materials Science Forum: Preface
AUTORES: Martins, R ; Fortunato, E ; Ferreira, I ; Dias, CJ;
PUBLICAÇÃO: 2004, FONTE: Advanced Materials Forum II: Proceedings of the II International Materials Symposium: Materials 2003 and XI Encontro da Sociedade Portugesa de Materials, 2003 ATERIAIS in Materials Science Forum, VOLUME: 455-456
INDEXADO EM: Scopus
NO MEU: ORCID
258
TÍTULO: MIS photodiodes of polyrnorphous silicon deposited at higher growth rates by 27.12 MHz PECVD discharge
AUTORES: Aguas, H ; Pereira, L ; Raniero, L; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXADO EM: Scopus WOS
259
TÍTULO: New developments in gallium doped zinc oxide deposited on polymeric substrates by RF magnetron sputtering  Full Text
AUTORES: Fortunato, E ; Goncalves, A; Marques, A; Viana, A ; Aguas, H ; Pereira, L ; Ferreira, I ; Vilarinho, P ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: Symposium on Protective Coatings and Thin Films held at the E-MRS 20th Spring Meeting in SURFACE & COATINGS TECHNOLOGY, VOLUME: 180
INDEXADO EM: Scopus WOS CrossRef: 51
260
TÍTULO: Next generation of thin film transistors based on zinc oxide
AUTORES: Fortunato, E ; Barquinha, P ; Pimentel, A ; Goncalves, A; Pereira, L ; Marques, A; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: Symposium on Integration of Advanced Micro-and Nanoelectronic Devices held at the 2004 MRS Spring Meeting in INTEGRATION OF ADVANCED MICRO-AND NANOELECTRONIC DEVICES-CRITICAL ISSUES AND SOLUTIONS, VOLUME: 811
INDEXADO EM: Scopus WOS
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